ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,310, issued on Sept. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor memory devices and method of manufacturing the same" was invented by Takuya Futatsuyama (Suwon-si, South Korea) and Daeseok Byeon (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a semiconductor memory device includes a peripheral circuit structure, and a first and a second cell array structure. The peripheral circuit structure includes a circuit board, a peripheral circuit on the circuit board, a first insulating layer, and a plurality of first bonding pads on the first insulating layer. The first c...