US Patent Issued to SAMSUNG ELECTRONICS on Sept. 9 for "Memory device and method with compute express link for degradation" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,760, issued on Sept. 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device and method with compute express link for degradation" was invented by Janghyuk An (Suwon-si, South Korea) and Yong In Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Compute Express Link (CXL) memory device includes: memory cell groups configured to store data; one or more sensors configured to measure degradation factors of the memory cell groups; and a control component configured to: receive a memory allocation request from a host device connected to the CXL memory device using CXL; and perform memory allocatio...