US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including gate structure" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,150, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including gate structure" was invented by Sinyeon Kim (Suwon-si, South Korea), Jooseong Yun (Suwon-si, South Korea), Jieun Lee (Suwon-si, South Korea) and Hana Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region, an isolation region on a side surface of the active region, a gate trench having a first trench portion crossing the active region and a second trench portion in the isolation region, a first gate portion within the first trench portion and a second gate po...