ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,476, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Jeonghyuk Yim (Suwon-si, South Korea), Wandon Kim (Suwon-si, South Korea), Hyunbae Lee (Suwon-si, South Korea), Hyoseok Choi (Suwon-si, South Korea), Sunghwan Kim (Suwon-si, South Korea) and Junki Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate including an active pattern, a source/drain pattern on the active pattern, an active contact on the source/drain pattern; a lower power line in the substrate, a lower ...