ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,524, issued on Sept. 29, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory devices including row decoder circuits having sub-word line driver circuit with nor logic circuit" was invented by Sanghoon Jung (Suwon-si, South Korea), Changyoung Lee (Suwon-si, South Korea) and Jeongdon Ihm (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a row decoder connected to a plurality of word lines of each of a plurality of memory blocks. The row decoder includes a main word line driver circuit commonly connected to the plurality of memory blocks and configured to generate first main word l...