ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,750,060, issued on Sept. 29, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device and storage device including the same" was invented by Tongsung Kim (Suwon-si, South Korea), Hyeseong Shin (Suwon-si, South Korea), Hyunwoo Ahn (Suwon-si, South Korea), Seonkyoo Lee (Suwon-si, South Korea), Hyunsung Lee (Suwon-si, South Korea) and Daechul Jeong (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory chip performs phase calibration and duty cycle correction operations using first and second loop circuits. The first loop circuit includes a phase detector, a first counter, and a delay cell. The second lo...