US Patent Issued to SAMSUNG ELECTRONICS on Sept. 22 for "Semiconductor device including source/drain pattern with main layer and buffer layer having germanium and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,452, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including source/drain pattern with main layer and buffer layer having germanium and method of fabricating the same" was invented by Jinbum Kim (Suwon-si, South Korea), Gyeom Kim (Suwon-si, South Korea), Youngkwang Kim (Suwon-si, South Korea), Chanyoung Kim (Suwon-si, South Korea), Jangwoo Park (Suwon-si, South Korea), Sangmoon Lee (Suwon-si, South Korea) and Sujin Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a p-type metal-oxide-semiconductor (MOS) f...