US Patent Issued to SAMSUNG ELECTRONICS on Sept. 2 for "Semiconductor device including two-dimensional semiconductor material" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,399, issued on Sept. 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including two-dimensional semiconductor material" was invented by Minhyun Lee (Suwon-si, South Korea), Minsu Seol (Suwon-si, South Korea), Yeonchoo Cho (Seongnam-si, South Korea) and Hyeonjin Shin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device which use a two-dimensional semiconductor material as a channel layer. The semiconductor device includes: a gate electrode on a substrate; a gate dielectric on the gate electrode; a channel layer on the gate dielectric; and a source ele...