ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,450, issued on Sept. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"CMOS image sensor" was invented by Younggu Jin (Suwon-si, South Korea), Seunghyun Lee (Suwon-si, South Korea) and Youngchan Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A CMOS image sensor includes: a substrate including a plurality of unit pixel regions. The substrate includes: a first surface configured to receive light; a second surface opposite to the first surface; a deep device isolation portion disposed in the substrate and configured to isolate the plurality of unit pixel regions from each other, wherein the deep device...