US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Image sensor including field-effect transistors" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,726,739, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Image sensor including field-effect transistors" was invented by Hyeokjong Lee (Suwon-si, South Korea), Yunjung Kim (Suwon-si, South Korea), Sungwook Jun (Suwon-si, South Korea), Yeongseok Choi (Suwon-si, South Korea), Minho Kwon (Suwon-si, South Korea), Mooyoung Kim (Suwon-si, South Korea) and Yunhong Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor includes a first chip including a pixel array including a plurality of pixels, and a second chip including a peripheral circuit configured to drive the pixel array and ...