US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "High voltage transfer device and a memory device including the same" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,671, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"High voltage transfer device and a memory device including the same" was invented by Soung Hoon Sim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device comprises a one time programmable (OTP) memory cell that includes a program transistor and a read transistor; and a high voltage transfer device configured to level-shift an external high voltage to an internal voltage, wherein the high voltage transfer device includes a first PMOS transistor having a first end connected to an external high voltage terminal, a second P...