US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Boundary gate structure for diffusion break in 3D-stacked semiconductor device" (New York Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,215, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Boundary gate structure for diffusion break in 3D-stacked semiconductor device" was invented by Saehan Park (Clifton Park, N.Y.), Panjae Park (Clifton Park, N.Y.), Seungyoung Lee (Clifton Park, N.Y.), Byounghak Hong (Latham, N.Y.) and Gunho Jo (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a three-dimensional stacked (3D-stacked) semiconductor device which includes: a lower active region divided into a lower-1st active sub-region and a lower-2nd active sub-region by at least one lower boundary gate structure; and an upper activ...