ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,777, issued on Oct. 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Kunsang Park (Suwon-si, South Korea), Ho-Jin Lee (Suwon-si, South Korea) and Seokho Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a lower structure including a first substrate, a first pad on the first substrate, and a first insulating layer enclosing the first pad, and an upper structure including a second substrate, a second pad on the second substrate, and a second insulating layer enclosing the second pad. Each of the fi...