ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,655, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Vertical non-volatile memory devices with improved coupling and methods for manufacturing the same" was invented by Dongsung Choi (Suwon-si, South Korea), Byongju Kim (Suwon-si, South Korea), Youjung Kim (Suwon-si, South Korea), Chaeho Kim (Suwon-si, South Korea) and Changheon Cheon (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical non-volatile memory device may include a mold structure including first and second insulation patterns and a first gate electrode, a semiconductor pattern extending through the mold structure in a ...