US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Semiconductor devices including capacitor structure" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,666, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices including capacitor structure" was invented by Yaejin Hong (Suwon-si, South Korea), Junrak Choi (Suwon-si, South Korea), Jinsu Lee (Suwon-si, South Korea), Jungwoo Kang (Suwon-si, South Korea) and Yirang Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate, a dielectric layer covering the lower electrodes and including a halogen element, and an upper electrode covering the dielectric layer. Each of the plurality ...