US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Semiconductor device including blocking layer and source/drain structure" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,691, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including blocking layer and source/drain structure" was invented by Jongryeol Yoo (Suwon-si, South Korea) and Jungtaek Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region including a first portion and a second portion; an isolation region on a side surface of the active region; a plurality of active layers stacked and spaced apart from each other in a vertical direction on the first portion of the active region; an epitaxial structure disposed on the second portion...