US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Semiconductor device having a contact interface offset from a lowermost point of a source/drain upper surface" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,914, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having a contact interface offset from a lowermost point of a source/drain upper surface" was invented by Seulki Hong (Suwon-si, South Korea), Younghan Kim (Suwon-si, South Korea) and Jaeyeop Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first gate structure, a first source/drain layer and a first contact plug. The first gate structure is formed on a substrate, and extends in a second direction parallel to an upper surface of the substrate. The first source/drain layer is fo...