US Patent Issued to SAMSUNG ELECTRONICS on Oct. 20 for "Semiconductor device having a buffer structure" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,437, issued on Oct. 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having a buffer structure" was invented by Ahrang Choi (Hwaseong-si, South Korea), Chansic Yoon (Anyang-si, South Korea), Hoin Ryu (Suwon-si, South Korea) and Junghoon Han (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes active regions defined by a device isolation region in a substrate; trenches extending in a first direction to intersect the active regions; buried gate structures buried in the trenches, respectively, and having upper surfaces located on a level lower than a leve...