ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,693, issued on Oct. 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory array programming method using bitlines and memory device for performing the same" was invented by Byeonghoon Choi (Suwon-si, South Korea), Myeonghee Oh (Suwon-si, South Korea), Hyuntaek Jung (Suwon-si, South Korea) and Hanbyul Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including a plurality of memory cells, respectively connected to a plurality of bitlines, a first multiplexer including a plurality of transistors connected to the plurality of bitlines, a reference circuit ...