US Patent Issued to SAMSUNG ELECTRONICS on Oct. 14 for "Memory device having asymmetric page buffer array architecture" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,468, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device having asymmetric page buffer array architecture" was invented by Gyosoo Choo (Suwon-si, South Korea) and Daeseok Byeon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices having an asymmetric page buffer array architecture are provided. The memory device includes a memory cell array in which each of plural memory planes is included in a cell array structure, and a row decoder array and a page buffer array included in a peripheral circuit structure vertically overlap the cell array structure. The row decoder a...