US Patent Issued to SAMSUNG ELECTRONICS on Oct. 14 for "Integrated circuit semiconductor element having heterogeneous gate structures and method of fabricating integrated circuit semiconductor element" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,304, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Integrated circuit semiconductor element having heterogeneous gate structures and method of fabricating integrated circuit semiconductor element" was invented by Kyungsoo Kim (Hwaseong-si, South Korea) and Kyenhee Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit semiconductor element includes: a substrate; a complementary field effect transistor (FET) (cFET) formed over the substrate and having a quadruple-gate structure, in which nano sheet stacked structures are sequentially stacked; and a planar FET having a m...