US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,954, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction device" was invented by Jeongchun Ryu (Hwaseong-si, South Korea), Seungjae Lee (Suwon-si, South Korea), Naoki Hase (Hwaseong-si, South Korea) and Kwangseok Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of t...