ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,395, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including two-dimensional material and method of fabricating the same" was invented by Minsu Seol (Suwon-si, South Korea), Junyoung Kwon (Suwon-si, South Korea), Jitak Nam (Suwon-si, South Korea) and Minseok Yoo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include at least one first two-dimensional material layer; a source electrode and a drain electrode that are respectively on both sides of the at least one first two-dimensional material layer; second two-dimensional material layer...