ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,382, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Pilkwang Kim (Suwon-si, South Korea), Seunghyun Song (Hwaseong-si, South Korea), Yoonsuk Kim (Suwon-si, South Korea), Gwangjun Kim (Suwon-si, South Korea) and Jaemin Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region, a plurality of channel layers spaced apart from each other on the active region, a gate structure including a gate dielectric layer and a gate electrode, and source/drain regions on both sides of the gate structure. The gate structure i...