US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device changing clock frequency according to the number of active blocks and storage device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,843, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device changing clock frequency according to the number of active blocks and storage device including the same" was invented by Seo-Hyun Shin (Suwon-si, South Korea), Youngcho Kim (Suwon-si, South Korea) and Soonwon Jeong (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is disclosed including a memory cell array, a voltage generator, and a control logic. The memory cell array has a plurality of active blocks, each active block including a plurality of memory cells operating at the same clock frequency. The voltage ...