ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,837, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device and operating method thereof" was invented by Yonghyuk Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of cell blocks, each of the cell blocks including a memory cell array including a plurality of cell strings, connected in parallel between a bit line and a common source line, and a control logic. At least one of the plurality of cell blocks includes a plurality of ground selection transistors connected to a corresponding plurality of special word lines. The control logic performs...