ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,384, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Kyunghee Cho (Suwon-si, South Korea), Donghoon Hwang (Suwon-si, South Korea), Hyojin Kim (Suwon-si, South Korea), Byungho Moon (Suwon-si, South Korea) and Doyoung Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a first fin and a second fin that extend in a first horizontal direction on a first region of a substrate, a third fin and a fourth fin that extend in the first horizontal direction on a second region of a substrate, a connected gate line at lea...