US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Image sensor including a source follower transistor having drain regions" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,471, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Image sensor including a source follower transistor having drain regions" was invented by Junghye Kim (Suwon-si, South Korea), Donghyun Kim (Suwon-si, South Korea), Sung In Kim (Suwon-si, South Korea), Kyoungeun Chang (Suwon-si, South Korea) and Jae Ho Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor includes a pixel separation part in a substrate and configured to separate pixels, the pixels including a first pixel, the pixel separation part including first to fourth sidewalls that at least partially define the first...