US Patent Issued to SAMSUNG ELECTRONICS on Nov. 25 for "Three-dimensional semiconductor device including ferroelectric transistor" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,230, issued on Nov. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three-dimensional semiconductor device including ferroelectric transistor" was invented by Jongho Woo (Suwon-si, South Korea), Youngji Noh (Suwon-si, South Korea) and Minjun Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor device includes a plate common source line, first and second word lines spaced apart from each other to at least partially define a vertical space therebetween, a channel pattern in the vertical space, a ferroelectric layer including a first portion between the channel pattern an...