US Patent Issued to SAMSUNG ELECTRONICS on Nov. 25 for "Memory device configured to generate read current based on size of memory cell and value of read current actually applied to memory cell" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,507, issued on Nov. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Memory device configured to generate read current based on size of memory cell and value of read current actually applied to memory cell" was invented by Daeshik Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a memory device which includes a memory cell array that includes a plurality of memory cells and divided into a first region and a second region, and a sensing circuit that generates a first read current for determining data stored in memory cells belonging to the first region from among the plurality of memo...