ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,713, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Seung Min Song (Suwon-si, South Korea), Hyo-Jin Kim (Suwon-si, South Korea) and Kyung Hee Cho (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a lower active pattern which is spaced apart from the substrate and extends in a first direction, an upper active pattern on the lower active pattern, the upper active pattern being spaced apart from the lower active pattern and extending in the first direction, a gate structure...