ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,843, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Transistor stacks having spacers, and related fabrication methods" was invented by Keumseok Park (Slingerlands, N.Y.), Jaejik Baek (Watervliet, N.Y.) and Kang-ill Seo (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Transistor devices are provided. A transistor device includes a transistor stack including first and second transistors. The transistor device includes an insulating spacer that is on a sidewall of a first gate of the first transistor and between a plurality of first semiconductor channel layers of the first transistor. Moreover, the ...