ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,775, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor memory device" was invented by Jun-Bum Lee (Suwon-si, South Korea), Dongsik Kong (Suwon-si, South Korea), Jihye Kwon (Suwon-si, South Korea), Junsoo Kim (Suwon-si, South Korea), Jae Hyun Choi (Suwon-si, South Korea) and Hyun Seung Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Active regions defined by device isolation layer are provided on a substrate. A word line crossing the active regions and a gate dielectric layer between the word line and the active regions are provided. A capping insulating pattern coverin...