ALEXANDRIA, Va., May 26 -- United States Patent no. 12,636,612, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Gas treatment system, semiconductor process system including the same, and gas treatment method using the same" was invented by Wonsu Lee (Suwon-si, South Korea), Hyunseok Kim (Suwon-si, South Korea), Jungdae Park (Suwon-si, South Korea), Kimoon Lee (Suwon-si, South Korea) and Jong-San Chang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A gas treatment system includes a first scrubber configured to treat a gas exhausted from a process chamber, a catalytic reactor connected to the first scrubber and configured to treat a gas passing th...