US Patent Issued to SAMSUNG ELECTRONICS on May 20 for "Method of fabricating semiconductor device including porous dielectric layer" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,245, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of fabricating semiconductor device including porous dielectric layer" was invented by Jongcheon Kim (Seoul, South Korea), Hyunchul Lee (Hwaseong-si, South Korea), Ki-Jeong Kim (Seongnam-si, South Korea), Donghwi Shin (Yongin-si, South Korea) and Hyun-Sil Hong (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device and a device fabricated thereby, the method including sequentially stacking an interlayer insulating layer, a porous dielectric layer, a first mask layer, and a second mask la...