ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,126, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor memory devices including stepwise profiles and methods of fabricating the same" was invented by Jina Kim (Suwon-si, South Korea), Kang-Uk Kim (Suwon-si, South Korea), Ho-In Ryu (Suwon-si, South Korea), Yunho Song (Suwon-si, South Korea) and Dalhyeon Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate having first and second active patterns adjacent to each other and separated by a trench, the first and second active patterns including a first source/drain region; the second active patte...