ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,490, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Method of manufacturing integrated circuit device" was invented by Sookyung Kim (Seongnam-si, South Korea) and Chan Hwang (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an integrated circuit (IC) device, the method including forming an underlayer on a feature layer such that the underlayer includes an acid generator; forming an acid-containing underlayer by generating a first acid from the acid generator; forming a photoresist film on the acid-containing underlayer; generating a second acid in a first area of th...