ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,344, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device, memory device test method, and test system" was invented by Hong-Jun Jin (Suwon-si, South Korea), Wonyoung Choi (Suwon-si, South Korea), Chungman Kim (Suwon-si, South Korea) and Youngseok Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device according to an embodiment includes a memory cell array; a timing circuit configured to generate a first clock signal and a second clock signal, the second clock signal having a frequency that is i-times the frequency of the first clock signal; a command decoder configu...