ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,336, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices" was invented by Dongoh Kim (Daegu, South Korea), Gyuhyun Kil (Hwaseong-si, South Korea), Junghoon Han (Hwaseong-si, South Korea) and Doosan Back (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second trenches in respective first and second regions in a substrate, a first isolation structure having a first inner wall oxide pattern, a first liner, and a first filling insulation pattern sequentially stacked I the first trench, a second isolation structure having a second inner w...