US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Vertical nonvolatile memory device including gate electrodes with metal-doped graphene" (South Korean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,449, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Vertical nonvolatile memory device including gate electrodes with metal-doped graphene" was invented by Keunwook Shin (Yongin-si, South Korea), Changhyun Kim (Seoul, South Korea), Sehun Park (Suwon-si, South Korea), Hyunwoo Kim (Seoul, South Korea), Kyung-Eun Byun (Seongnam-si, South Korea), Dongjin Yun (Pohang-si, South Korea) and Changseok Lee (Gwacheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical nonvolatile memory device may include a channel layer extending in a first direction; a plurality of gate electrodes and a pl...