ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,714, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device including bonding enhancement layer and method of forming the same" was invented by Taeyeong Kim (Yongin-si, South Korea), Taeseong Kim (Suwon-si, South Korea), Kwangjin Moon (Hwaseong-si, South Korea) and Hyungjun Jeon (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a first structure including a first dielectric layer and a first conductive pattern in the first dielectric layer, the first conductive pattern including a first conductive material and a first bonding enhancement mater...