ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,660, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-Do, South Korea).
"Method of manufacturing semiconductor device" was invented by Inbeom Yim (Suwon-si, South Korea), Jeongjin Lee (Suwon-si, South Korea), Seungyoon Lee (Suwon-si, South Korea) and Chan Hwang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The method including forming a first photoresist (PR) pattern by exposing first field areas of a first PR layer, forming a second PR pattern by exposing first top field areas and first bottom field areas of a second PR layer, measuring a first top intra-field overlay for the first top field areas ...