US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Method of forming capacitor and method of manufacturing DRAM element by using the same" (South Korean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,434, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of forming capacitor and method of manufacturing DRAM element by using the same" was invented by Jimin Chae (Suwon-si, South Korea), Younglim Park (Suwon-si, South Korea), Dongmin Shin (Suwon-si, South Korea) and Jaesoon Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a capacitor includes forming lower electrodes including a first metal; forming a support layer pattern, which connects outer side walls of the lower electrodes to each other; forming a first interface layer including a first metal oxide h...