US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Method of fabricating semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,433, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of fabricating semiconductor device" was invented by Jinseo Choi (Suwon-si, South Korea), Sohyang Lee (Suwon-si, South Korea), Jeongmin Jin (Suwon-si, South Korea) and Sohee Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device include providing a substrate including cell and peripheral regions, forming a cell gate structure on the cell region, forming a peripheral gate structure on the peripheral region, forming a bit-line structure on the cell region, forming a preliminary pad l...