US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Memory device having vertical structure and memory system including the memory device" (South Korean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,452, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device having vertical structure and memory system including the memory device" was invented by Changbum Kim (Seoul, South Korea), Sunghoon Kim (Seongnam-si, South Korea) and Daeseok Byeon (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first lower semiconductor layer and a second lower semiconductor layer. The first lower semiconductor layer is disposed below a first upper semiconductor layer including a first memory cell array. The first lower semiconductor layer includes a first page buffer el...