US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Integrated circuit including gate-all-around transistor" (South Korean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,472, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit including gate-all-around transistor" was invented by Bonyeop Kim (Gwangmyeong-si, South Korea), Taehyung Kim (Yongin-si, South Korea), Sangshin Han (Suwon-si, South Korea) and Sangyeop Baeck (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes: a memory cell block including a plurality of bitcells; and an input and output (I/O) block including a plurality of gate-all-around (GAA) transistors connected to the bitcells, wherein the I/O block includes a plurality of active regions disposed...