ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,453, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Ferroelectric memory device" was invented by Kiheun Lee (Suwon-si, South Korea), Yongseok Kim (Suwon-si, South Korea), Hyuncheol Kim (Suwon-si, South Korea) and Daewon Ha (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes a channel layer, a gate insulation layer on the channel layer, and a gate electrode layer on the gate insulation layer. The gate insulation layer includes a ferroelectric inductive layer and a ferroelectric stack structure on the ferroelectric inductive layer, and the ferroelectr...