ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,811, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Jaemyung Choi (Busan, South Korea), Kyoungwoo Lee (Hwaseong-si, South Korea), Nayon Kim (Hwaseong-si, South Korea), Seonghun Lim (Suwon-si, South Korea) and Sungyup Jung (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a lower structure, a first interlayer dielectric (ILD) on the lower structure, first pattern regions extending inside the first ILD in a first direction, the first pattern regions being spaced apart from ea...