US Patent Issued to SAMSUNG ELECTRONICS on March 3 for "Memory device and operation to reduce impact of parasitic wire resistance and capacitance" (Indian Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,461, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device and operation to reduce impact of parasitic wire resistance and capacitance" was invented by Lava Kumar Pulluru (Bengaluru, India), Manish Chandra Joshi (Bengaluru, India), Parvinder Kumar Rana (Bengaluru, India), Poornima Venkatasubramanian (Bengaluru, India), Ved Prakash (Bengaluru, India) and Chaitanya Vavilla (Bengaluru, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and its operation reduce the impact of a parasitic wire Resistance and Capacitance (RC) in the memory device. At least one of a rise transition and a fa...