ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,467, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device and operating method thereof" was invented by Woosul Shin (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array, a page buffer circuit including first to Nth page buffers, each page buffer including a sensing node, and a control logic configured to control page buffer operations, wherein the control logic is further configured to control the page buffer operations such that, in a first page buffer operation on a first page buffer included in a first group, a precharge period and a d...